| 1 |
Multilevel resistive switching performance of TiO2-based flexible memory prepared by low-temperature sol-gel method with UV irradiation
Zou LL
Current Applied Physics, 24, 32, 2021 |
| 2 |
2D nanocomposite of hexagonal boron nitride nanoflakes and molybdenum disulfide quantum dots applied as the functional layer of all-printed flexible memory device
Rehman MM, Siddiqui GU, Rehman MMU, Kim HB, Doh YH, Choi KH
Materials Research Bulletin, 105, 28, 2018 |
| 3 |
A study of selenium nanoparticles as charge storage element for flexible semi-transparent memory devices
Alotaibi S, Manjunatha KN, Paul S
Applied Surface Science, 424, 330, 2017 |
| 4 |
Effect of adding a polymer and varying device size on the resistive switching characteristics of perovskite nanocubes heterojunction
Yang YJ, Rehman MM, Siddiqui GU, Na KH, Choi KH
Current Applied Physics, 17(12), 1733, 2017 |
| 5 |
Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications
Qian K, Tay RY, Nguyen VC, Wang JX, Cai GF, Chen TP, Teo EHT, Lee PS
Advanced Functional Materials, 26(13), 2176, 2016 |
| 6 |
Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure
Jo H, Ko J, Lim JA, Chang HJ, Kim YS
Macromolecular Rapid Communications, 34(4), 355, 2013 |
| 7 |
Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate
Yoon SM, Jung SW, Yang S, Park SHK, Yu BG, Ishiwara H
Current Applied Physics, 11(3), S219, 2011 |
