검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Kink effect in ultrathin FDSOI MOSFETs Park HJ, Bawedin M, Choi HG, Cristoloveanu S Solid-State Electronics, 143, 33, 2018 |
| 2 |
Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI Song L, Hu ZY, Liu ZL, Xin HW, Zhang ZX, Zou SC Solid-State Electronics, 130, 15, 2017 |
| 3 |
Physical insights of body effect and charge degradation in floating-body DRAMs Giusi G Solid-State Electronics, 95, 1, 2014 |
| 4 |
Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs Liu KJ, Chang TC, Yang RY, Chen CE, Ho SH, Tsai JY, Hsieh TY, Cheng O, Huang CT Thin Solid Films, 572, 39, 2014 |
| 5 |
Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures Yang R, Qian H, Li JF, Xiong YZ, Shi JL, Loh WY, Yu MB, Lo PGQ, Balasubramanian N, Kwong DL Solid-State Electronics, 80, 55, 2013 |
| 6 |
Impact ionization induced dynamic floating body effect in junctionless transistors Yu R, Nazarov AN, Lysenko VS, Das S, Ferain I, Razavi P, Shayesteh M, Kranti A, Duffy R, Colinge JP Solid-State Electronics, 90, 28, 2013 |
| 7 |
Fully depleted double-gate MSDRAM cell with additional nonvolatile functionality Park KH, Bawedin M, Lee JH, Bae YH, Na KI, Lee JH, Cristoloveanu S Solid-State Electronics, 67(1), 17, 2012 |
| 8 |
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect Chena CH, Kuo JB, Chen D, Yeh CS Solid-State Electronics, 70, 3, 2012 |
| 9 |
Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance Park KH, Cristoloveanu S, Bawedin M, Bae Y, Na KI, Lee JH Solid-State Electronics, 59(1), 39, 2011 |
| 10 |
Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs Na KI, Cristoloveanu S, Bae YH, Patruno P, Xiong W, Lee JH Solid-State Electronics, 53(2), 150, 2009 |