화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy
Kim SY, Lee HJ, Park SH, Lee W, Jung MN, Fujii K, Goto T, Sekiguchi T, Chang JH, Kil G, Yao T
Journal of Crystal Growth, 312(14), 2150, 2010
2 Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns
Bougrioua Z, Gibarta P, Calleja E, Jahn U, Trampert A, Ristic J, Utrera M, Nataf G
Journal of Crystal Growth, 309(2), 113, 2007
3 Double-crystal x-ray topography of freestanding HVPE grown n-type GaN
Mahadik NA, Qadri SB, Rao MV
Thin Solid Films, 516(2-4), 233, 2007