검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Defect annihilation-mediated enhanced activation energy of GaAs0.979N0.021-capped InAs/GaAs quantum dots by H- ion implantation Biswas M, Singh S, Balgarkashi A, Makkar RL, Bhatnagar A, Subrahmanyam NBV, Gupta SK, Bhagwat P, Chakrabarti S Thin Solid Films, 639, 73, 2017 |
| 2 |
Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride Woo RL, Malouf G, Cheng SF, Woo RN, Goorsky M, Hicks RF Journal of Crystal Growth, 310(3), 579, 2008 |
| 3 |
Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy Saito K, Nishimura K, Suzuki H, Ohshita Y, Yamaguchi M Thin Solid Films, 516(11), 3517, 2008 |
| 4 |
Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy, as the N source Suzuki H, Nishimura K, Lee HS, Ohshita Y, Ima NK, Yamaguchi M Thin Solid Films, 515(12), 5008, 2007 |
| 5 |
Reactively sputtered GaAsxN1-x thin films Yadav BS, Major SS, Srinivasa RS Thin Solid Films, 515(3), 1043, 2006 |