검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption Wang JN, Zhang X, Li H, Wang C, Li HR, Keller S, Mishra UK, Nener BD, Parish G, Atkin R Journal of Colloid and Interface Science, 583, 331, 2021 |
| 2 |
Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM Applied Surface Science, 317, 1022, 2014 |
| 3 |
Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth Hu YL, Kraemer S, Fini PT, Speck JS Journal of Crystal Growth, 331(1), 49, 2011 |
| 4 |
Investigation of GaN-based light-emitting diodes using double photonic crystal patterns Huang HW, Lai FI, Kuo SY, Huang JK, Lee KY Solid-State Electronics, 56(1), 31, 2011 |
| 5 |
Investigation on the thermal behavior of microwave GaN HEMTs Crupi G, Avolio G, Raffo A, Barmuta P, Schreurs DMMP, Caddemi A, Vannini G Solid-State Electronics, 64(1), 28, 2011 |
| 6 |
High temperature chemical and physical changes of the HVPE-prepared GaN semiconductor Drygas M, Bucko MM, Olejniczak Z, Grzegory I, Janik JF Materials Chemistry and Physics, 122(2-3), 537, 2010 |
| 7 |
On the piezoelectric coupling constant of epitaxial Mg-doped GaN Xu X, Woods RC Solid-State Electronics, 54(7), 680, 2010 |
| 8 |
Vacancy profiles and clustering in light-ion-implanted GaN and ZnO Tuomisto F Applied Surface Science, 255(1), 54, 2008 |
| 9 |
Structural properties of GaN and related alloys grown by radio-frequency magnetron sputter epitaxy Shinoda H, Mutsukura N Thin Solid Films, 516(10), 2837, 2008 |
| 10 |
Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target Yadav BS, Singh S, Ganguli T, Kumar R, Major SS, Srinivasa RS Thin Solid Films, 517(2), 488, 2008 |