검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures Mori J, Asahi H, Fudeta M, Noh JH, Watanabe D, Matsuda S, Asami K, Narukawa Y, Kawakami Y, Fujita S, Kaneko T, Gonda S Applied Surface Science, 159, 498, 2000 |
| 2 |
Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE Ouchi K, Mishima T Journal of Crystal Growth, 209(2-3), 242, 2000 |
| 3 |
Improved properties of polycrystalline GaN grown on silica glass substrate Hiroki M, Asahi H, Tampo H, Asami K, Gonda S Journal of Crystal Growth, 209(2-3), 387, 2000 |
| 4 |
Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers Kizuki H, Kouji Y, Hayafuji N, Kajikawa Y Journal of Crystal Growth, 209(2-3), 440, 2000 |
| 5 |
Gas-source MBE growth of Tl-based III-V semiconductors and their Raman scattering characterization Zhou YK, Asahi H, Ayabe A, Takenaka K, Fushida M, Asami K, Gonda S Journal of Crystal Growth, 209(2-3), 547, 2000 |
| 6 |
Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3 Hirose F Journal of Crystal Growth, 212(1-2), 103, 2000 |
| 7 |
Growth of single crystalline 3C-SiC and AlN on Si using porous Si as a compliant seed crystal Purser D, Jenkins M, Lieu D, Vaccaro F, Faik A, Hasan MA, Leamy HJ, Carlin C, Sardela MR, Zhao QX, Willander M, Karlsteen M Materials Science Forum, 338-3, 313, 2000 |
| 8 |
Effects of atomic hydrogen on growth behavior of Si films by Si2H6-source molecular beam epitaxy Yasuda Y, Matsuyama T, Sato K, Kondo M, Ikeda H, Zaima S Thin Solid Films, 317(1-2), 48, 1998 |
| 9 |
Thermodynamic Analysis of Ash3 and PH3 Decomposition Including Subhydrides Jordan AS, Robertson A Journal of Vacuum Science & Technology A, 12(1), 204, 1994 |