검색결과 : 18건
No. | Article |
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1 |
Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET Sharma A, Jain A, Pratap Y, Gupta RS Solid-State Electronics, 123, 26, 2016 |
2 |
Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs Shin M, Shi M, Mouis M, Cros A, Josse E, Mukhopadhyay S, Piot B, Kim GT, Ghibaudo G Solid-State Electronics, 103, 229, 2015 |
3 |
In depth characterization of electron transport devices in 14 nm FD-SOI CMOS Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G Solid-State Electronics, 112, 13, 2015 |
4 |
Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift Nabatame T, Kimura M, Yamada H, Ohi A, Ohishi T, Chikyow T Thin Solid Films, 520(8), 3387, 2012 |
5 |
Improvement of Al2O3/Ge interfacial properties by O-2-annealing Shibayama S, Kato K, Sakashita M, Takeuchi W, Nakatsuka O, Zaima S Thin Solid Films, 520(8), 3397, 2012 |
6 |
Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy Su CY, Frederickx M, Menghini M, Dillemans L, Lieten R, Smets T, Seo JW, Locquet JP Thin Solid Films, 520(14), 4508, 2012 |
7 |
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide-nitride-oxide-silicon memory Liu L, Xu JP, Chen JX, Ji F, Huang XD, Lai PT Thin Solid Films, 524, 263, 2012 |
8 |
Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs Kilchytska V, Alvarado J, Collaert N, Rooyackers R, Put S, Simoen E, Claeys C, Flandre D Solid-State Electronics, 59(1), 18, 2011 |
9 |
Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method Lee DH, Lee H, Kanashima T, Okuyama M Applied Surface Science, 257(3), 917, 2010 |
10 |
Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers Hirayama K, Kira W, Yoshino K, Yang HG, Wang D, Nakashima H Thin Solid Films, 518(9), 2505, 2010 |