화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET
Sharma A, Jain A, Pratap Y, Gupta RS
Solid-State Electronics, 123, 26, 2016
2 Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs
Shin M, Shi M, Mouis M, Cros A, Josse E, Mukhopadhyay S, Piot B, Kim GT, Ghibaudo G
Solid-State Electronics, 103, 229, 2015
3 In depth characterization of electron transport devices in 14 nm FD-SOI CMOS
Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G
Solid-State Electronics, 112, 13, 2015
4 Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift
Nabatame T, Kimura M, Yamada H, Ohi A, Ohishi T, Chikyow T
Thin Solid Films, 520(8), 3387, 2012
5 Improvement of Al2O3/Ge interfacial properties by O-2-annealing
Shibayama S, Kato K, Sakashita M, Takeuchi W, Nakatsuka O, Zaima S
Thin Solid Films, 520(8), 3397, 2012
6 Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy
Su CY, Frederickx M, Menghini M, Dillemans L, Lieten R, Smets T, Seo JW, Locquet JP
Thin Solid Films, 520(14), 4508, 2012
7 Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide-nitride-oxide-silicon memory
Liu L, Xu JP, Chen JX, Ji F, Huang XD, Lai PT
Thin Solid Films, 524, 263, 2012
8 Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Kilchytska V, Alvarado J, Collaert N, Rooyackers R, Put S, Simoen E, Claeys C, Flandre D
Solid-State Electronics, 59(1), 18, 2011
9 Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method
Lee DH, Lee H, Kanashima T, Okuyama M
Applied Surface Science, 257(3), 917, 2010
10 Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers
Hirayama K, Kira W, Yoshino K, Yang HG, Wang D, Nakashima H
Thin Solid Films, 518(9), 2505, 2010