검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Growth of high Ge content SiGe on (110) oriented Si wafers Hikavyy A, Vanherle W, Vincent B, Dekoster J, Bender H, Moussa A, Witters L, Hoffman T, Loo R Thin Solid Films, 520(8), 3179, 2012 |
| 2 |
Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains Hartmann JM, Py M, Barnes JP, Previtali B, Batude P, Billon T Journal of Crystal Growth, 327(1), 68, 2011 |
| 3 |
Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering Hartmann JM, Gonzatti F, Fillot F, Billon T Journal of Crystal Growth, 310(1), 62, 2008 |
| 4 |
Low temperature growth kinetics of high Ge content SiGe in reduced pressure-chemical vapor deposition Hartmann JM Journal of Crystal Growth, 305(1), 113, 2007 |
| 5 |
SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition Bogumilowicz Y, Hartmann JM, Rolland G, Billon T Journal of Crystal Growth, 274(1-2), 28, 2005 |
| 6 |
Mechanisms of diffusion-enhanced thermal stability of Si/Si1-xGex/Si heterostructures grown by chemical vapor deposition Bentzen A, Menon C, Radamson HH Journal of Crystal Growth, 261(1), 22, 2004 |
| 7 |
SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition Hartmann JM, Loup V, Rolland G, Holliger P, Laugier F, Vannuffel C, Semeria MN Journal of Crystal Growth, 236(1-3), 10, 2002 |
| 8 |
Effect of HCl on the SiGe growth kinetics in reduced pressure-chemical vapor deposition Hartmann JM, Champay F, Loup V, Rolland G, Semeria MN Journal of Crystal Growth, 241(1-2), 93, 2002 |