검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Role of the Surface N-H Molecular Layer in High Quality In-RICH InGaN Growth by MOVPE Yayama T, Kangawa Y, Kakimoto K Journal of Chemical Engineering of Japan, 47(7), 615, 2014 |
| 2 |
Enhancement of hole injection for nitride-based light-emitting devices Komirenko SM, Kim KW, Kochelap VA, Zavada JM Solid-State Electronics, 47(1), 169, 2003 |
| 3 |
Surface and interface electronic properties of group III-nitride heterostructures Rizzi A Applied Surface Science, 190(1-4), 311, 2002 |
| 4 |
Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model Takayama T, Yuri M, Itoh K, Baba T, Harris JS Journal of Crystal Growth, 222(1-2), 29, 2001 |
| 5 |
Epitaxial growth of InN films on MgAl2O4 (111) substrates Tsuchiya T, Miki O, Shimada K, Ohnishi M, Wakahara A, Yoshida A Journal of Crystal Growth, 220(3), 185, 2000 |
| 6 |
Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure Ishida M, Ogawa M, Orita K, Imafuji O, Yuri M, Sugino T, Itoh K Journal of Crystal Growth, 221, 345, 2000 |