검색결과 : 58건
| No. | Article |
|---|---|
| 1 |
Nature of the filament formed in HfO2-based resistive random access memory De Stefano F, Houssa M, Afanas'ev VV, Kittl JA, Jurczak M, Stesmans A Thin Solid Films, 533, 15, 2013 |
| 2 |
A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy Son JY, Kim DY, Kim H, Maeng WJ, Shin YS, Shin YH Electrochemical and Solid State Letters, 14(8), H311, 2011 |
| 3 |
Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory Kim JY, Yoo JH, Youn TO, Kim SJ, Kim JN, Lee SH, Joo MS, Roh JS, Park SK Electrochemical and Solid State Letters, 14(8), H337, 2011 |
| 4 |
Scanning Tunneling Microscopy Study of the Multi-Step Deposited and Annealed HfSiOx Gate Dielectric Yew KS, Ang DS, Tang LJ, Cui K, Bersuker G, Lysaght PS Journal of the Electrochemical Society, 158(10), H1021, 2011 |
| 5 |
HfO2 and ZrO2-Based Microchemical Ion Sensitive Field Effect Transistor (ISFET) Sensors: Simulation & Experiment Jankovic V, Chang JP Journal of the Electrochemical Society, 158(10), P115, 2011 |
| 6 |
Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for Charge-Based Biosensors Chen YW, Liu MZ, Kaneko T, McIntyre PC Electrochemical and Solid State Letters, 13(3), G29, 2010 |
| 7 |
Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO2 High-k Dielectric Lin CH, Kuo Y Electrochemical and Solid State Letters, 13(3), H83, 2010 |
| 8 |
Change in Band Alignment of Nitrided Hf-Silicate Films Grown on Ge(001) Using Gaseous NH3 Cho YJ, Mah JW, Kim CY, Kim H, Lee HJ, Kang HJ, Moon DW, Kim SO, Cho MH Electrochemical and Solid State Letters, 13(5), G33, 2010 |
| 9 |
Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O-3 Oxidant Generated Without N-2 Assistance Park TJ, Chung KJ, Kim HC, Ahn J, Wallace RM, Kim J Electrochemical and Solid State Letters, 13(8), G65, 2010 |
| 10 |
Low Voltage, High Performance Thin Film Transistor with HfInZnO Channel and HfO2 Gate Dielectric Son DH, Kim DH, Kim JH, Sung SJ, Jung EA, Kang JK Electrochemical and Solid State Letters, 13(8), H274, 2010 |