| 1 |
Three-terminal heterojunction bipolar transistor solar cells with non-ideal effects: Efficiency limit and parametric optimum selection
Zhang X, Ang YS, Ye ZL, Su SH, Chen JC, Ang LK
Energy Conversion and Management, 188, 112, 2019 |
| 2 |
Efficient light output power for InGaP/GaAs heterojunction bipolar transistors incorporated with InGaAs quantum wells
Huang TH, Wu MC
Solid-State Electronics, 121, 12, 2016 |
| 3 |
InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
Teng T, Xu AH, Ai LK, Sun H, Qi M
Journal of Crystal Growth, 378, 618, 2013 |
| 4 |
An efficient heat-spreader design: First demonstration on InGaP/graded InGaAs base/GaAs collector-up HBTs
Tseng HC, Chu WJ
Solid-State Electronics, 79, 290, 2013 |
| 5 |
Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistors
Lim HW, Baek CH, Kang BK
Solid-State Electronics, 81, 5, 2013 |
| 6 |
Early effect of SiGe heterojunction bipolar transistors
Xu XB, Zhang HM, Hu HY, Qu JT
Solid-State Electronics, 72, 1, 2012 |
| 7 |
Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing
Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
Thin Solid Films, 520(8), 3271, 2012 |
| 8 |
An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage
Tsai JH, Lour WS, Chao YT, Ye SS, Ma YC, Jhou JC, Wu YR, Ou-Yang JJ
Thin Solid Films, 521, 172, 2012 |
| 9 |
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
Teng T, Ai LK, Xu AH, Sun H, Zhu FY, Qi M
Journal of Crystal Growth, 323(1), 525, 2011 |
| 10 |
A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs
Tseng HC, Chen JY
Solid-State Electronics, 56(1), 85, 2011 |
