| 1 |
Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates
Ishii K, Amagasu R, Nomura I
Journal of Crystal Growth, 512, 96, 2019 |
| 2 |
Epitaxial growth of Co2FeSi/MgO/GaAs(001) heterostructures using molecular beam epitaxy
Hoffmann G, Jenichen B, Herfort J
Journal of Crystal Growth, 512, 194, 2019 |
| 3 |
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy
Noh YK, Lee ST, Kim MD, Oh JE
Journal of Crystal Growth, 509, 141, 2019 |
| 4 |
Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD
Niass MI, Zang JW, Lu ZQ, Du ZQ, Chen X, Qu YP, Wang F, Liu YH
Journal of Crystal Growth, 506, 24, 2019 |
| 5 |
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
Kakkerla RK, Anandan D, Hsiao CJ, Yu HW, Singh SK, Chang EY
Journal of Crystal Growth, 490, 19, 2018 |
| 6 |
Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy
Noh YK, Lee ST, Kim MD, Oh JE
Journal of Crystal Growth, 460, 37, 2017 |
| 7 |
Crystallinity control of SiC grown on Si by sputtering method
Watanabe R, Tsukamoto T, Kamisako K, Suda Y
Journal of Crystal Growth, 463, 67, 2017 |
| 8 |
Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy
Nakasu T, Sun W, Kobayashi M, Asahi T
Journal of Crystal Growth, 468, 635, 2017 |
| 9 |
Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application
Tsay CY, Chen CL
Journal of Crystal Growth, 468, 662, 2017 |
| 10 |
First principles investigation of SiC/AlGaN(0001) band offset
Kojima E, Endo K, Shirakawa H, Chokawa K, Araidai M, Ebihara Y, Kanemura T, Onda S, Shiraishi K
Journal of Crystal Growth, 468, 758, 2017 |
