검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach Hung CW, Chang CH, Chen WC, Chen CC, Chen HI, Tsai YT, Tsai JH, Liu WC Solid-State Electronics, 124, 5, 2016 |
| 2 |
Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Tsai YT, Liu WC Applied Surface Science, 341, 120, 2015 |
| 3 |
On a transistor-type hydrogen gas sensor prepared by an electrophoretic deposition (EPD) approach Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Chiou YJ, Liu HY, Liu WC International Journal of Hydrogen Energy, 39(25), 13320, 2014 |
| 4 |
AlGaN/GaN power amplifiers for ISM applications Krausse D, Benkhelifa F, Reiner R, Quay R, Ambacher O Solid-State Electronics, 74, 108, 2012 |
| 5 |
High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers Kuan TM, Chang SJ, Su YK, Lin JC, Wei SC, Wang CK, Huang CI, Lan WH, Bardwell JA, Tang H, Lin WJ, Cherng YT Journal of Crystal Growth, 272(1-4), 300, 2004 |
| 6 |
High frequency n-type MODFETs on ultra-thin virtual SiGe substrates Hackbarth T, Herzog HJ, Rinaldi F, Soares T, Hollander B, Mantl S, Luysberg M, Fichtner PFP Solid-State Electronics, 47(7), 1179, 2003 |
| 7 |
Investigation of Si/SiGe heterostructure material using non-destructive optical techniques Coonan BP, Griffin N, Beechinor JT, Murtagh M, Redmond G, Crean GM, Hollander B, Mantl S, Bozzo S, Lazzari JL, d'Avitaya FA, Derrien J, Paul DJ Thin Solid Films, 364(1-2), 75, 2000 |