| 1 |
High-rate reactive high-power impulse magnetron sputtering of transparent conductive Al-doped ZnO thin films prepared at ambient temperature
Rezek J, Novak P, Houska J, Pajdarova AD, Kozak T
Thin Solid Films, 679, 35, 2019 |
| 2 |
High-Speed Preparation of Highly (100)-Oriented CeO2 Film by Laser Chemical Vapor Deposition
Zhao P, Su S, Wang Y, Chi C, Zhang ZH, Mao YW, Huang ZL, Xu YL, Goto T
Journal of the American Ceramic Society, 99(9), 3104, 2016 |
| 3 |
Investigation on influence of deposition rate of YBa2Cu3O7-delta superconducting film prepared on Hastelloy C276 substrate by spray atomizing and coprecipitating laser chemical vapor deposition
Zhao P, Su S, Wang Y, Chen C, Mao YW, Huang ZL, Niu YF, Xu YL, Goto T
Thin Solid Films, 599, 179, 2016 |
| 4 |
Effect of Background Pressure on Deposition Rate and Crystallinity of Deposited Silicon in Non-Equilibrium Plasma Jet CVD
Nishida S, Nodo R, Muta H, Kuribayashi S
KAGAKU KOGAKU RONBUNSHU, 41(2), 148, 2015 |
| 5 |
Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH4/H-2 PE-CVD
Nishida S, Muta H, Kuribayashi S
Journal of Chemical Engineering of Japan, 47(6), 478, 2014 |
| 6 |
Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition
Wu SD, Kambara M, Yoshida T
Plasma Chemistry and Plasma Processing, 33(2), 433, 2013 |
| 7 |
High rate low pressure plasma-enhanced chemical vapor deposition for barrier and optical coatings
Gunther S, Fahland M, Fahlteich J, Meyer B, Straach S, Schiller N
Thin Solid Films, 532, 44, 2013 |
| 8 |
Optical, morphological, structural, electrical, molecular orientation, and electroluminescence characteristics of organic semiconductor films prepared at various deposition rates
Matsushima T, Shiomura K, Naka S, Murata H
Thin Solid Films, 520(6), 2283, 2012 |
| 9 |
Fast epitaxial growth of a-axis- and c-axis-oriented YBa2Cu3O7-delta films on (100) LaAlO3 substrate by laser chemical vapor deposition
Zhao P, Ito A, Tu R, Goto T
Applied Surface Science, 257(9), 4317, 2011 |
| 10 |
Effect of additional VHF plasma source base on conventional RF-PECVD for large area fast growth microcrystalline silicon films
Kim YJ, Choi YS, Choi IS, Han JG
Current Applied Physics, 11(5), S54, 2011 |
