검색결과 : 132건
| No. | Article |
|---|---|
| 1 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
| 2 |
Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool Tsukui M, Iyechika Y, Nago H, Takahashi H Journal of Crystal Growth, 509, 103, 2019 |
| 3 |
Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge Tajima J, Hikosaka T, Kuraguchi M, Nunoue S Journal of Crystal Growth, 509, 129, 2019 |
| 4 |
Understanding and controlling Ga contamination in InAlN barrier layers Mrad M, Charles M, Mazel Y, Nolot E, Kanyandekwe J, Veillerot M, Ferret P, Feuillet G Journal of Crystal Growth, 507, 139, 2019 |
| 5 |
High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors Charles M, Baines Y, Bavard A, Bouveyron R Journal of Crystal Growth, 483, 89, 2018 |
| 6 |
Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD Lumbantoruan F, Zheng XX, Huang JH, Huang RY, Mangasa F, Chang EY, Tu YY, Lee CT Journal of Crystal Growth, 501, 7, 2018 |
| 7 |
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors Latrach S, Frayssinet E, Defrance N, Chenot S, Cordier Y, Gaquiere C, Maaref H Current Applied Physics, 17(12), 1601, 2017 |
| 8 |
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs Gamarra P, Lacam C, Tordjman M, Medjdoub F, di Forte-Poisson MA Journal of Crystal Growth, 464, 143, 2017 |
| 9 |
AlGaN HEMTs on patterned resistive/conductive SiC templates Prystawko P, Sarzynski M, Nowakowska-Siwinska A, Crippa D, Kruszewski P, Wojtasiak W, Leszczynski M Journal of Crystal Growth, 464, 159, 2017 |
| 10 |
Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNX passivation Bai ZY, Du JF, Liu Y, Xin Q, Liu Y, Yu Q Solid-State Electronics, 133, 31, 2017 |