| 1 |
Effects of thermal and electrical stress on defect generation in InAs metal-oxide-semiconductor capacitor
Baik M, Kang HK, Kang YS, Jeong KS, Lee C, Kim H, Song JD, Cho MH
Applied Surface Science, 467, 1161, 2019 |
| 2 |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Lin KY, Wan HW, Chen KHM, Fanchiang YT, Chen WS, Lin YH, Cheng YT, Chen CC, Lin HY, Young LB, Cheng CP, Pi TW, Kwo J, Hong M
Journal of Crystal Growth, 512, 223, 2019 |
| 3 |
Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study
Hong M, Wan HW, Chang P, Lin TD, Chang YH, Lee WC, Pi TW, Kwo J
Journal of Crystal Growth, 477, 159, 2017 |
| 4 |
Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction
Biswas D, Sinh AK, Chakraborty S
Applied Surface Science, 384, 376, 2016 |
| 5 |
Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)
Kim SK, Choi WY
Solid-State Electronics, 116, 88, 2016 |
| 6 |
The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications
Song H, Jeon H, Shin C, Shin S, Jang W, Park J, Chang J, Choi JH, Kim Y, Lim H, Seo H, Jeon H
Thin Solid Films, 619, 317, 2016 |
| 7 |
Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-kappa HfO2 LTPS-TFTs
Chang KM, Huang BW, Wu CH, Deng IC, Chang TC, Lin SC
Solid-State Electronics, 111, 7, 2015 |
| 8 |
Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond
Miceli G, Pasquarello A
Applied Surface Science, 291, 16, 2014 |
| 9 |
Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
Piallat F, Beugin V, Gassilloud R, Dussault L, Pelissier B, Leroux C, Caubet P, Vallee C
Applied Surface Science, 303, 388, 2014 |
| 10 |
Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-kappa HfO2/Hf/Si thin film
Cantas A, Aygun G, Turan R
Applied Surface Science, 318, 199, 2014 |
