검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Effects of temperature variation (300-600 K) in MOSFET modeling in 6H-silicon carbide Hasanuzzaman M, Islam SK, Tolbert LM Solid-State Electronics, 48(1), 125, 2004 |
| 2 |
Temperature dependency of MOSFET device characteristics in 4H-and 6H-silicon carbide (SiC) Hasanuzzaman M, Islam SK, Tolbert LM, Alam MT Solid-State Electronics, 48(10-11), 1877, 2004 |
| 3 |
High temperature, high current, 4H-SiC Accu-DMOSFET Singh R, Ryu SH, Palmour JW Materials Science Forum, 338-3, 1271, 2000 |
| 4 |
High temperature 4H-SiC FET for gas sensing applications Savage SM, Konstantinov A, Saroukhan AM, Harris CI Materials Science Forum, 338-3, 1431, 2000 |
| 5 |
High temperature gas sensors based on catalytic metal field effect transistors Svenningstorp H, Uneus L, Tobias P, Lundstrom I, Ekedahl LG, Spetz AL Materials Science Forum, 338-3, 1435, 2000 |