화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
Nattermann L, Beyer A, Ludewig P, Hepp T, Sterzer E, Volz K
Journal of Crystal Growth, 463, 151, 2017
2 High-purity InAs1-xSbx epilayer grown by a LPE technique
Lv YF, Hu SH, Xu YG, Zhou W, Wang Y, Wang R, Yu GL, Dai N
Journal of Crystal Growth, 416, 96, 2015
3 Development of a new infrared device for monitoring the coefficient of variation in yarns
Huang CC, Tang TT
Journal of Applied Polymer Science, 106(4), 2342, 2007
4 Intersubband absorption in p-type Si1-xGex quantum dots on pre-patterned Si substrates made by a diblock copolymer process
Cha D, Ogawa M, Chen C, Kim S, Lee J, Wang KL, Wang JY, Russell TP
Journal of Crystal Growth, 301, 833, 2007
5 Structure-related infrared optical properties of Ba(ZrxTi1-x)O-3 thin films grown on Pt/Ti/SiO2/Si substrates by low-temperature processing
Xu JB, Gao C, Zhai JW, Yao X, Xue JQ, Huang ZM
Journal of Crystal Growth, 291(1), 130, 2006
6 Microstructural characterization of HgTe/HgCdTe superlattices
Aoki T, Takeguchi M, Boieriu P, Singh R, Grein C, Chang Y, Sivananthan S, Smith DJ
Journal of Crystal Growth, 271(1-2), 29, 2004