검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates Lucovsky G, Lee S, Long JP, Seo H, Luning J Applied Surface Science, 254(23), 7933, 2008 |
| 2 |
Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures Lucovsky G, Phillips JC Thin Solid Films, 486(1-2), 200, 2005 |