| 1 |
Growth and properties of wide bandgap MgSe/ZnxCd1-xSe multiple quantum wells for intersubband devices operating at short wavelengths
Li BS, Shen A, Charles WO, Zhang Q, Tamargo MC
Journal of Crystal Growth, 311(7), 2113, 2009 |
| 2 |
Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption
Friel I, Driscoll K, Kulenica E, Dutta M, Paiella R, Moustakas TD
Journal of Crystal Growth, 278(1-4), 387, 2005 |
| 3 |
Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 mu m intersubband transitions
Ng HM, Gmachl C, Chu SNG, Cho AY
Journal of Crystal Growth, 220(4), 432, 2000 |
| 4 |
Controlling the Sign of Quantum Interference by Tunneling from Quantum-Wells
Faist J, Capasso F, Sirtori C, West KW, Pfeiffer LN
Nature, 390(6660), 589, 1997 |
| 5 |
Si1-xGex/Si Multiple-Quantum Wells on Si(100) and Si(110) for Infrared-Absorption
Kreifels TL, Hengehold RL, Yeo YK, Thompson PE, Simons DS
Journal of Vacuum Science & Technology A, 13(3), 636, 1995 |
| 6 |
Electrical and Optical-Properties of Heavily N-Doped GaSb-AlSb Multiquantum-Well Structures for Infrared Photodetector Applications
Brar B, Samoska L, Kroemer H, English JH
Journal of Vacuum Science & Technology B, 12(2), 1242, 1994 |
