| 1 |
On the emitter formation in nanotextured silicon solar cells to achieve improved electrical performances
Kafle B, Schon J, Fleischmann C, Werner S, Wolf A, Clochard L, Duffy E, Hofmann M, Rentsch J
Solar Energy Materials and Solar Cells, 152, 94, 2016 |
| 2 |
Impact of boron doping profiles on the specific contact resistance of screen printed Ag-Al contacts on silicon
Lohmuller E, Werner S, Hoenig R, Greulich J, Clement F
Solar Energy Materials and Solar Cells, 142, 2, 2015 |
| 3 |
Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon
Liang JH, Wu CH
Applied Surface Science, 310, 230, 2014 |
| 4 |
Impact of rapid thermal annealing temperature on non-metallised polycrystalline silicon thin-film diodes on glass
Hidayat H, Kumar A, Law F, Ke C, Widenborg PI, Aberle AG
Thin Solid Films, 534, 629, 2013 |
| 5 |
Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressure
Huang YJ, Liu CC, Lo KY, Chu SY
Applied Surface Science, 257(7), 2494, 2011 |
| 6 |
The influence of junction depth on short channel effects in vertical sidewall MOSFETs
Tan L, Buiu O, Hall S, Gill E, Uchino T, Ashburn P
Solid-State Electronics, 52(7), 1002, 2008 |
| 7 |
Modeling the effect of source/drain junction depth on bulk-MOSFET scaling
Murali R, Meindl JD
Solid-State Electronics, 51(6), 823, 2007 |
| 8 |
Determination of solar cell parameters from its current-voltage and spectral characteristics
Tivanov M, Patryn A, Drozdov N, Fedotov A, Mazanik A
Solar Energy Materials and Solar Cells, 87(1-4), 457, 2005 |
| 9 |
Estimation of ultra-shallow implants using SIMS NRA and chemical analysis
Tomita M, Suzuki M, Tachibe T, Kozuka S, Murakoshi A
Applied Surface Science, 203, 377, 2003 |
| 10 |
The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET
Ren HX, Hao Y
Solid-State Electronics, 46(5), 665, 2002 |
