검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Schottky junction photodiode based on graphene-organic semiconductor heterostructure Choi YJ, Woo HJ, Kim SC, Sun J, Kang MS, Song YJ, Cho JH Journal of Industrial and Engineering Chemistry, 89, 233, 2020 |
| 2 |
Growth and characterisation of n- and p-type ZnTe thin films for applications in electronic devices Olusola OI, Madugu ML, Abdul-Manaf NA, Dharmadasa IM Current Applied Physics, 16(2), 120, 2016 |
| 3 |
Growth and characterization of heavily selenium doped GaAs using MOVPE Maassdorf A, Hoffmann M, Weyers M Journal of Crystal Growth, 315(1), 57, 2011 |
| 4 |
Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Levinshtein ME, Ivanov PA, Mnatsakanov TT, Palmour JW, Das MK, Hull BA Solid-State Electronics, 52(11), 1802, 2008 |
| 5 |
Steady state self-heating and dc current-voltage characteristics of high-voltage 4H-SiC p(+)-n-n(+) rectifier diodes Levinshtein ME, Mnatsakanov TT, Vanov PA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 51(6), 955, 2007 |
| 6 |
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus Rao S, Bergamini F, Nipoti R, Saddow SE Applied Surface Science, 252(10), 3837, 2006 |
| 7 |
SiGe-Si junctions with boron-doped SiGe films deposited by co-sputtering Jelenkovic EV, Tong KY, Cheung WY, Wong SP, Shi BR, Pang GKH Solid-State Electronics, 50(2), 199, 2006 |
| 8 |
High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime Ivanov PA, Levinshtein ME, Palmour JW, Das MK, Hull BA Solid-State Electronics, 50(7-8), 1368, 2006 |
| 9 |
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature Bergamini F, Moscatelli F, Canino M, Poggi A, Nipoti R Materials Science Forum, 483, 625, 2005 |
| 10 |
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C Bergamini A, Rao SP, Saddow SE, Nipoti R Materials Science Forum, 483, 629, 2005 |