검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology Tsai YC, Gong J, Chan WC, Wu SY, Lien C Solid-State Electronics, 132, 80, 2017 |
| 2 |
Effect of edge junction isolation on the performance of laser doped selective emitter solar cells Hallam B, Wenham S, Lee H, Lee E, Lee H, Kim J, Shin J Solar Energy Materials and Solar Cells, 95(12), 3557, 2011 |
| 3 |
Transient blocking characteristics of highly efficient junction isolations based on standard CMOS process Starke TKH, Igic PM Solid-State Electronics, 49(7), 1217, 2005 |
| 4 |
The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier Hua WC, Yang TY, Liu CW Applied Surface Science, 224(1-4), 425, 2004 |