| 1 |
Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model
Chakir K, Bilel C, Habchi MM, Rebey A, El Jani B
Thin Solid Films, 630, 25, 2017 |
| 2 |
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films
Osintsev D, Sverdlov V, Selberherr S
Solid-State Electronics, 112, 46, 2015 |
| 3 |
Symmetry considerations in the empirical k.p Hamiltonian for the study of intermediate band solar cells
Luque A, Mellor A, Antolin E, Linares PG, Ramiro I, Tobias I, Marti A
Solar Energy Materials and Solar Cells, 103, 171, 2012 |
| 4 |
Subband engineering in n-type silicon nanowires using strain and confinement
Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H
Solid-State Electronics, 70, 73, 2012 |
| 5 |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 1 analytical consideration and strain-induced valley splitting
Windbacher T, Sverdlov V, Baumgartner O, Selberherr S
Solid-State Electronics, 54(2), 137, 2010 |
| 6 |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 2 efficient self-consistent numerical solution of the k . p schrodinger equation
Baumgartner O, Karner M, Sverdlov V, Kosina H
Solid-State Electronics, 54(2), 143, 2010 |
| 7 |
Two-band k center dot p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility
Sverdlov V, Karlowatz G, Dhar S, Kosina H, Selberherr S
Solid-State Electronics, 52(10), 1563, 2008 |
| 8 |
Electron subband structure and controlled valley splitting in silicon thin-body SOI FETs: Two-band k.p theory and beyond
Sverdlov V, Selberherr S
Solid-State Electronics, 52(12), 1861, 2008 |
| 9 |
Numerical simulation of pulverized coal combustion and NO formation
Li ZQ, Wei F, Jin Y
Chemical Engineering Science, 58(23-24), 5161, 2003 |
