| 1 |
High piezoelectric properties of modified nano lead titanate zirconate ceramics
Tawfik A, Hemeda OM, Henaish AMA, Dorgham AM
Materials Chemistry and Physics, 211, 1, 2018 |
| 2 |
Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model
Chakir K, Bilel C, Habchi MM, Rebey A, El Jani B
Thin Solid Films, 630, 25, 2017 |
| 3 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M
Solid-State Electronics, 115, 92, 2016 |
| 4 |
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films
Osintsev D, Sverdlov V, Selberherr S
Solid-State Electronics, 112, 46, 2015 |
| 5 |
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model
Maiorano P, Gnani E, Grassi R, Gnudi A, Reggiani S, Baccarani G
Solid-State Electronics, 98, 45, 2014 |
| 6 |
Dielectric and piezoelectric properties of non-stoichiometric (K0.5Na0.5)(Nb0.9+chi Ta0.1)O-3 ceramics
Lee KS, Yoo JH
Current Applied Physics, 12(3), 798, 2012 |
| 7 |
Symmetry considerations in the empirical k.p Hamiltonian for the study of intermediate band solar cells
Luque A, Mellor A, Antolin E, Linares PG, Ramiro I, Tobias I, Marti A
Solar Energy Materials and Solar Cells, 103, 171, 2012 |
| 8 |
Subband engineering in n-type silicon nanowires using strain and confinement
Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H
Solid-State Electronics, 70, 73, 2012 |
| 9 |
Ultraviolet emission efficiencies of AlxGa1-xN films pseudomorphically grown on AlyGa1-yN template (x < y) with various Al-content combinations
Fu D, Zhang R, Wang BG, Liu B, Xie ZL, Xiu XQ, Lu H, Zheng YD, Edwards G
Thin Solid Films, 519(22), 8013, 2011 |
| 10 |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 1 analytical consideration and strain-induced valley splitting
Windbacher T, Sverdlov V, Baumgartner O, Selberherr S
Solid-State Electronics, 54(2), 137, 2010 |
