검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
In situ monitoring of periodic structures during MOVPE of III-nitrides Simbrunner C, Kharchenko A, Navarro-Quezada A, Wegscheider M, Quast M, Li T, Bonanni A, Bethke J, Lischka K, Sitter H Journal of Crystal Growth, 310(7-9), 1607, 2008 |
| 2 |
Investigations in the initial build-up stages of polyelectrolyte multilayers by laser reflectometry and atomic force microscopy Diziain S, Dejeu J, Buisson L, Charraut D, Membrey F, Foissy A Thin Solid Films, 516(1), 1, 2007 |
| 3 |
Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy Habchi MM, Rebey A, Fouzri A, El Jani B Applied Surface Science, 253(1), 275, 2006 |
| 4 |
High-resistivity GaN buffer templates and their optimization for GaN-based HFETs Hubbard SM, Zhao G, Pavlidis D, Sutton W, Cho E Journal of Crystal Growth, 284(3-4), 297, 2005 |
| 5 |
In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE Rebey A, Habchi MM, Bchetnia A, El Jani B Journal of Crystal Growth, 261(4), 450, 2004 |
| 6 |
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate Chen J, Zhang SM, Zhang BS, Zhu JJ, Feng G, Shen XM, Wang YT, Yang H, Zheng WC Journal of Crystal Growth, 254(3-4), 348, 2003 |
| 7 |
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD Chen J, Zhang SM, Zhang BS, Zhu JJ, Shen XM, Feng G, Liu JP, Wang YT, Yang H, Zheng WC Journal of Crystal Growth, 256(3-4), 248, 2003 |
| 8 |
Monitoring crystal dissolution at nanometer resolution using laser reflectometry Eggington PJ, Taylor AG Journal of Crystal Growth, 208(1-4), 525, 2000 |
| 9 |
Application of in situ reflectance monitoring to molecular beam epitaxy of vertical-cavity structures Klem JF, Breiland WG, Fritz IJ, Drummond TJ, Lee SR Journal of Vacuum Science & Technology B, 16(3), 1498, 1998 |