1 |
Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors Jung YH, Hon S, Lee S, Jin S, Kim TW, Chang Y, Jang J Thin Solid Films, 681, 93, 2019 |
2 |
Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors Chae HJ, Seok KH, Lee SK, Joo SK Solid-State Electronics, 142, 20, 2018 |
3 |
Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2 Sakiyama S, Kaneko T, Ootsubo T, Sakai T, Nakashima K, Moto K, Yoneoka M, Takakura K, Tsunoda I Thin Solid Films, 557, 151, 2014 |
4 |
Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization Tojo Y, Miura A, Ishikawa Y, Yamashita I, Uraoka Y Thin Solid Films, 540, 266, 2013 |
5 |
Effect of MSi2/Si(111) (M = Co, Ni) interface structure on metal induced lateral crystallization Ahn JS, Yoon YG, Kim DK, Joo SK Thin Solid Films, 542, 426, 2013 |
6 |
Enhanced performance and reliability of NILC-TFTs using FSG buffer layer Chen CC, Wu YS, Chang CP Materials Chemistry and Physics, 132(2-3), 637, 2012 |
7 |
Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization Su CJ, Huang YF, Lin HC, Huang TY Solid-State Electronics, 77, 20, 2012 |
8 |
Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films Huang SY, Lin HL, Chao CG, Liu TF Thin Solid Films, 520(7), 2984, 2012 |
9 |
Low temperature crystallization of a-Si thin film by nickel MOCVD Lee SJ, Yun SJ, Son SW, Byun CW, Joo SK Current Applied Physics, 11(4), S151, 2011 |
10 |
Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors Wang BM, Yang TM, Wu YS, Su CJ, Lin HC Materials Chemistry and Physics, 124(1), 880, 2010 |