| 1 |
Aqueous lateral epitaxy overgrowth of ZnO on (0001) GaN at 90 degrees C: Part I. Increasing the critical thickness
Fillery SP, Lange FF
Thin Solid Films, 518(21), 6022, 2010 |
| 2 |
Aqueous lateral epitaxy overgrowth of ZnO on (0001) GaN at 90 degrees C Part II: Stress determination
Fillery SP, Clarke DR, Lange FF
Thin Solid Films, 518(21), 6030, 2010 |
| 3 |
Reduction of threading dislocations in hydrothermally grown ZnO films by lateral epitaxial overgrowth
Zhang YB, Goh GKL, Li S
Thin Solid Films, 518(24), E104, 2010 |
| 4 |
Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates
Zhou W, Ren DW, Dapkus PD
Journal of Crystal Growth, 290(1), 11, 2006 |
| 5 |
Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching
Wang J, Guo LW, Jia HQ, Xing ZG, Wang Y, Chen H, Zhou JM
Thin Solid Films, 515(4), 1727, 2006 |
| 6 |
Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition
Zhou W, Ren DW, Dapkus PD
Journal of Crystal Growth, 283(1-2), 31, 2005 |
| 7 |
Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method
Sugishita S, Shoji A, Mukai Y, Nishiguchi T, Michikami K, Issiki T, Ohshima S, Nishino S
Materials Science Forum, 483, 177, 2005 |
| 8 |
Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si substrates
Bushroa AR, Jacob C, Saijo H, Nishino S
Journal of Crystal Growth, 271(1-2), 200, 2004 |
| 9 |
Selective growth of 4H-SIC on 4H-SiC substrates using a high temperature mask
Li C, Seiler J, Bhat I, Chow TP
Materials Science Forum, 457-460, 185, 2004 |
| 10 |
2 MeV proton channeling contrast microscopy of LEO GaN thin film structures
Osipowicz T, Teo EJ, Bettiol AA, Watt F, Hao MS, Chua SJ
Thin Solid Films, 424(1), 139, 2003 |
