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| No. | Article |
|---|---|
| 1 |
The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter Bollaert S, Cordier Y, Zaknoune M, Happy H, Hoel V, Lepilliet S, Theron D, Cappy A Solid-State Electronics, 44(6), 1021, 2000 |