| 1 |
Minority carrier lifetime of Ge film epitaxial grown on a large-grain seed layer on glass
Nishida T, Nakata M, Suemasu T, Toko K
Thin Solid Films, 681, 98, 2019 |
| 2 |
Effects of Al grain size on metal -induced layer exchange growth of amorphous Ge thin film on glass substrate
Nakata M, Toko K, Suemasu T
Thin Solid Films, 626, 190, 2017 |
| 3 |
Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition
Tanami S, Ichida D, Hashimoto S, Seo H, Yamashita D, Itagaki N, Koga K, Shiratani M
Thin Solid Films, 641, 59, 2017 |
| 4 |
Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator
Toko K, Oya N, Nakata M, Suemasu T
Thin Solid Films, 616, 316, 2016 |
| 5 |
Role of Al2O3 intermediate layer for improving the quality of polycrystalline-silicon film in inverted aluminum-induced layer exchange
Duan WY, Meng FY, Bian JT, Yu J, Zhang LP, Liu ZX
Applied Surface Science, 327, 37, 2015 |
| 6 |
Sn-induced low-temperature (similar to 150 degrees C) crystallization of Ge on insulator
Ooato A, Suzuki T, Park JH, Miyao M, Sadoh T
Thin Solid Films, 557, 155, 2014 |
| 7 |
Large-grained poly-Si films on ZnO : Al coated glass substrates
Lee KY, Muske M, Gordon I, Berginski M, D'Haen J, Huepkes J, Gall S, Rech B
Thin Solid Films, 516(20), 6869, 2008 |
| 8 |
Origins of interdiffusion, crystallization and layer exchange in crystalline Al/amorphous Si layer systems
He D, Wang JY, Mittemeijer EJ
Applied Surface Science, 252(15), 5470, 2006 |
| 9 |
Theoretical study of the initial stage of the aluminium-induced layer-exchange process
Sarikov A, Schneider J, Klein J, Muske M, Gall S
Journal of Crystal Growth, 287(2), 442, 2006 |
| 10 |
Aluminium-induced crystallisation of amorphous silicon: influence of the aluminium layer on the process
Klein J, Schneider J, Muske M, Gall S, Fuhs W
Thin Solid Films, 451-52, 481, 2004 |
