검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P Journal of Crystal Growth, 306(1), 86, 2007 |
| 2 |
Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates Haffouz S, Grzegorczyk A, Hageman PR, Vennegues P, van der Drift EWJM, Larsen PK Journal of Crystal Growth, 248, 568, 2003 |
| 3 |
Low-dislocation-density GaN and AlxGa1-xN (x <= 0.13) grown on grooved substrates Sano S, Detchprohm T, Mochizuki S, Kamiyama S, Amano H, Akasaki I Journal of Crystal Growth, 235(1-4), 129, 2002 |