검색결과 : 33건
No. | Article |
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1 |
Direct MOVPE growth of semipolar (1122) AlxGa1-xN across the alloy composition range Hatui N, Rahman AA, Maliakkal CB, Bhattacharya A Journal of Crystal Growth, 437, 1, 2016 |
2 |
Growth of aluminium nitride with linear change of ammonia flow Caban P, Rudzinski M, Wojcik M, Gaca J, Strupinski W Journal of Crystal Growth, 414, 81, 2015 |
3 |
Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs Fikry M, Ren Z, Madel M, Tischer I, Thonke K, Scholz F Journal of Crystal Growth, 370, 319, 2013 |
4 |
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Gupta P, Rahman AA, Hatui N, Gokhale MR, Deshmukh MM, Bhattacharya A Journal of Crystal Growth, 372, 105, 2013 |
5 |
Study of multiple-stacking growth of 1.55 mu m InAs columnar quantum dots with modulated tensile-strained InGaAsP barrier layers Okumura S, Yasuoka N, Kawaguchi K, Tanaka Y, Ekawa M Journal of Crystal Growth, 340(1), 87, 2012 |
6 |
InAs quantum dot growth on planar InP (100) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer Yuan JY, Wang H, van Veldhoven RPJ, Notzel R Journal of Crystal Growth, 315(1), 102, 2011 |
7 |
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Hospodkova A, Pangrac J, Oswald J, Hazdra P, Kuldova K, Vyskocil J, Hulicius E Journal of Crystal Growth, 315(1), 110, 2011 |
8 |
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC Caban P, Strupinski W, Szmidt J, Wojcik M, Gaca J, Kelekci O, Caliskan D, Ozbay E Journal of Crystal Growth, 315(1), 168, 2011 |
9 |
Growth of the active zone in nitride based long wavelength laser structures Rossow U, Jonen H, Brendel M, Drager A, Langer T, Hoffmann L, Bremers H, Hangleiter A Journal of Crystal Growth, 315(1), 250, 2011 |
10 |
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime Hospodkova A, Pangrac J, Vyskocil J, Oswald J, Vetushka A, Caha O, Hazdra P, Kuldova K, Hulicius E Journal of Crystal Growth, 317(1), 39, 2011 |