화학공학소재연구정보센터
검색결과 : 33건
No. Article
1 Direct MOVPE growth of semipolar (1122) AlxGa1-xN across the alloy composition range
Hatui N, Rahman AA, Maliakkal CB, Bhattacharya A
Journal of Crystal Growth, 437, 1, 2016
2 Growth of aluminium nitride with linear change of ammonia flow
Caban P, Rudzinski M, Wojcik M, Gaca J, Strupinski W
Journal of Crystal Growth, 414, 81, 2015
3 Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs
Fikry M, Ren Z, Madel M, Tischer I, Thonke K, Scholz F
Journal of Crystal Growth, 370, 319, 2013
4 MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
Gupta P, Rahman AA, Hatui N, Gokhale MR, Deshmukh MM, Bhattacharya A
Journal of Crystal Growth, 372, 105, 2013
5 Study of multiple-stacking growth of 1.55 mu m InAs columnar quantum dots with modulated tensile-strained InGaAsP barrier layers
Okumura S, Yasuoka N, Kawaguchi K, Tanaka Y, Ekawa M
Journal of Crystal Growth, 340(1), 87, 2012
6 InAs quantum dot growth on planar InP (100) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer
Yuan JY, Wang H, van Veldhoven RPJ, Notzel R
Journal of Crystal Growth, 315(1), 102, 2011
7 Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
Hospodkova A, Pangrac J, Oswald J, Hazdra P, Kuldova K, Vyskocil J, Hulicius E
Journal of Crystal Growth, 315(1), 110, 2011
8 Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC
Caban P, Strupinski W, Szmidt J, Wojcik M, Gaca J, Kelekci O, Caliskan D, Ozbay E
Journal of Crystal Growth, 315(1), 168, 2011
9 Growth of the active zone in nitride based long wavelength laser structures
Rossow U, Jonen H, Brendel M, Drager A, Langer T, Hoffmann L, Bremers H, Hangleiter A
Journal of Crystal Growth, 315(1), 250, 2011
10 InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
Hospodkova A, Pangrac J, Vyskocil J, Oswald J, Vetushka A, Caha O, Hazdra P, Kuldova K, Hulicius E
Journal of Crystal Growth, 317(1), 39, 2011