검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al(2)O3 surface passivation Asif M, Chen C, Peng D, Xi W, Zhi J Solid-State Electronics, 142, 36, 2018 |
| 2 |
ALD Al2O3 passivation of L-g=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates Sun B, Chang HD, Wang SK, Niu JB, Liu HG Solid-State Electronics, 138, 40, 2017 |
| 3 |
Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance Ding P, Chen C, Ding WC, Yang F, Su YB, Wang DH, Jin Z Solid-State Electronics, 123, 1, 2016 |
| 4 |
RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film Liu JL, Li CM, Zhu RH, Guo JC, Chen LX, Wei JJ, Hei LF, Wang JJ, Feng ZH, Guo H, Lv FX Applied Surface Science, 284, 798, 2013 |
| 5 |
Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment Lim JW, Ahn HK, Kim SI, Kang DM, Lee JM, Min BG, Lee SH, Yoon HS, Ju CW, Kim H, Mun JK, Nam ES, Park HM Thin Solid Films, 547, 106, 2013 |
| 6 |
Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration Sibaja-Hernandez A, You SZ, Van Huylenbroeck S, Venegas R, De Meyer K, Decoutere S Solid-State Electronics, 65-66, 72, 2011 |
| 7 |
Optimization of external poly base sheet resistance in 0.13 mu m quasi self-aligned SiGe:C HBTs You S, Van Huylenbroeck S, Nguyen ND, Sibaja-Hernandez A, Venegas R, Van Wichelen K, Decoutere S, De Meyer K Thin Solid Films, 518, S68, 2010 |
| 8 |
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Lim TC, Rozeau O, Buj C, Paccaud M, Lepilliet S, Dambrine G, Danneville F Solid-State Electronics, 53(4), 433, 2009 |
| 9 |
The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance Lim TC, Armstrong GA Solid-State Electronics, 50(5), 774, 2006 |
| 10 |
Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor Baek CH, Oh TK, Kang BK Solid-State Electronics, 49(8), 1335, 2005 |