| 1 |
Enhancing DPCD in Liquid Products by Mechanical Inactivation Effects: Assessment of Feasibility
Hoferick R, Gockel F, Muller M, Schonherr H, Barbe S
Chemie Ingenieur Technik, 92(8), 1122, 2020 |
| 2 |
RETRACTION: Analytical and FE modelling of bidirectional stress distributions in adhesively bonded step-lap joints under thermo-mechanical loads (Retraction of Vol 33, Pg 1, 2018)
Jrad H, Bouhamed A, Mallek H, Mellouli H
Journal of Adhesion Science and Technology, 33(1), I, 2019 |
| 3 |
On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs
Kumari A, Kumar S, Sharma TK, Das MK
Solid-State Electronics, 154, 36, 2019 |
| 4 |
Dissipative versus reversible contributions to macroscopic dynamics: the role of time-reversal symmetry and entropy production
Brand HR, Pleiner H, Svensek D
Rheologica Acta, 57(12), 773, 2018 |
| 5 |
A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling
Rudenko T, Nazarov A, Kilchytska V, Flandre D
Solid-State Electronics, 117, 66, 2016 |
| 6 |
A fully coupled hydro-thermo-mechanical model for the spontaneous combustion of underground coal seams
Xia TQ, Zhou FB, Liu JS, Kang JH, Gao F
Fuel, 125, 106, 2014 |
| 7 |
Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
Balaguer M, Roldan JB, Donetti L, Gamiz F
Solid-State Electronics, 67(1), 30, 2012 |
| 8 |
A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates
Satter MM, Islam AE, Varghese D, Alam MA, Haque A
Solid-State Electronics, 56(1), 141, 2011 |
| 9 |
Physics-based compact model for ultra-scaled FinFETs
Yesayan A, Pregaldiny F, Chevillon N, Lallement C, Sallese JM
Solid-State Electronics, 62(1), 165, 2011 |
| 10 |
Thermo-mechanical phenomena in PEM fuel cells
Martemianov S, Bograchev D, Grandidier JC, Kadjo JJ
International Journal of Energy Research, 34(7), 635, 2010 |
