검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
| 2 |
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Brosselard P, Zorngiebel V, Planson D, Scharnholz S, Chante JP, Spahn E, Raynaud C, Lazar M Materials Science Forum, 457-460, 1129, 2004 |
| 3 |
6.2kV 4H-SiC pin diode with low forward voltage drop Sugawara Y, Asano K, Singh R, Palmour JW Materials Science Forum, 338-3, 1371, 2000 |