검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition Chen Y, Kimoto T, Takeuchi Y, Matsunami H Journal of Crystal Growth, 254(1-2), 115, 2003 |
| 2 |
Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates Chen Y, Kimoto T, Takeuchi Y, Matsunami H Journal of Crystal Growth, 237, 1224, 2002 |
| 3 |
Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates Chen Y, Kimoto T, Takeuchi Y, Matsunami H Materials Science Forum, 389-3, 255, 2002 |
| 4 |
Defect-Free Strain Relaxation in Locally MBE-Grown SiGe Heterostructures Rupp T, Kaesen F, Hansch W, Hammerl E, Gravesteijn DJ, Schorer R, Silveira E, Abstreiter G, Eisele I Thin Solid Films, 294(1-2), 27, 1997 |