| 1 |
Quantification of impurities in carbon nanotubes: Development of ICP-MS sample preparation methods
Lim JH, Bairi VG, Fong A
Materials Chemistry and Physics, 198, 324, 2017 |
| 2 |
Removal of metal impurities in metallurgical grade silicon by cold crucible continuous melting and directional solidification
Huang F, Chen RR, Guo JJ, Ding HS, Su YQ
Separation and Purification Technology, 188, 67, 2017 |
| 3 |
Study of degradation in bulk lifetime of n-type silicon wafer due to oxidation of boron-rich layer
Ryu K, Choi CJ, Rohatgi A, Ok YW
Current Applied Physics, 16(5), 497, 2016 |
| 4 |
Self-purification model for metal-assisted chemical etching of metallurgical silicon
Li XP, Xiao YJ, Yan CL, Zhou KY, Miclea PT, Meyer S, Schweizer SL, Sprafke A, Lee JH, Wehrspohn RB
Electrochimica Acta, 138, 476, 2014 |
| 5 |
Effects of phosphorus diffusion gettering on minority carrier lifetimes of single-crystalline, multi-crystalline and UMG silicon wafer
Kim J, Yoon SY, Choi K
Current Applied Physics, 13(9), 2103, 2013 |
| 6 |
Metal impurities behaviors of silicon in the fractional melting process
Lee W, Kim J, Jang BY, Ahn Y, Lee H, Yoon W
Solar Energy Materials and Solar Cells, 95(1), 59, 2011 |
| 7 |
Performance of C18 Derivatized Silica Gels: A Structure-Performance Study
Forrer N, Morbidelli M
Separation Science and Technology, 44(11), 2471, 2009 |
| 8 |
A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer
Senzaki J, Goto M, Kojima K, Yamabe K, Fukuda K
Materials Science Forum, 457-460, 1269, 2004 |
