| 1 |
Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing
Okada N, Inomata Y, Ikeuchi H, Fujimoto S, Itakura H, Nakashima S, Kawamura R, Tadatomo K
Journal of Crystal Growth, 512, 147, 2019 |
| 2 |
Selective-area growth of magnetic MnAs nanodisks on Si (111) substrates using multiple types of dielectric masks
Horiguchi R, Hara S, Iida M, Morita K
Journal of Crystal Growth, 507, 226, 2019 |
| 3 |
Magnetization characterization of MnAs nanoclusters at close range in bended MnAs/InAs heterojunction nanowires
Kodaira R, Horiguchi R, Hara S
Journal of Crystal Growth, 507, 241, 2019 |
| 4 |
2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces
Mutta GR, Carapezzi S
Applied Surface Science, 447, 845, 2018 |
| 5 |
MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
Lemettinen J, Okumura H, Kim I, Kauppinen C, Palacios T, Suihkonen S
Journal of Crystal Growth, 487, 12, 2018 |
| 6 |
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Lemettinen J, Okumura H, Kim I, Rudzinski M, Grzonka J, Palacios T, Suihkonen S
Journal of Crystal Growth, 487, 50, 2018 |
| 7 |
Magnetization in vertical MnAs/InAs heterojunction nanowires
Kabamoto K, Kodaira R, Hara S
Journal of Crystal Growth, 464, 80, 2017 |
| 8 |
The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers
Charles M, Baines Y, Bos S, Escoffier R, Garnier G, Kanyandekwe J, Lebreton J, Vandendaele W
Journal of Crystal Growth, 464, 164, 2017 |
| 9 |
Experimental study of the orientation dependence of indium incorporation in GaInN
Bhat R, Guryanov GM
Journal of Crystal Growth, 433, 7, 2016 |
| 10 |
Reply to "Comments on'Experimental study of the orientation dependence of indium incorporation in GaInN'" by Morteza Monavarian
Bhat R, Guryanov GM
Journal of Crystal Growth, 445, 108, 2016 |
