| 1 |
Negative quantum capacitance effect from Bi2Te1.5Se1.5 with frequency dependent capacitance of polyvinyl alcohol (PVA) film in MOS structure
Choi H, Park J, Shim JW, Shin C
Applied Surface Science, 463, 1046, 2019 |
| 2 |
Measurement of the quantum capacitance from two-dimensional surface state of a topological insulator at room temperature
Choi H, Kim TG, Shin C
Applied Surface Science, 407, 16, 2017 |
| 3 |
Ge1-xSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships
Lee CC, Hsieh CP, Huang PC, Cheng SW, Liao MH
Thin Solid Films, 602, 78, 2016 |
| 4 |
Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor
Bansal A, Kumar MJ
Current Applied Physics, 15(10), 1130, 2015 |
| 5 |
Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate
Guo JH, Ai Y, Cheng YB, Li CM, Kang YJ, Wang ZM
Electrophoresis, 36(16), 1862, 2015 |
| 6 |
Methodology for 1/f noise parameter extraction for high-voltage MOSFETs
Mavredakis N, Pflanzl W, Seebacher E, Bucher M
Solid-State Electronics, 103, 202, 2015 |
| 7 |
Planar GaAs nanowire tri-gate MOSFETs by vapor-liquid-solid growth
Zhang C, Li XL
Solid-State Electronics, 93, 40, 2014 |
| 8 |
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
Wang LX, Su SJ, Wang W, Gong X, Yang Y, Guo PF, Zhang GZ, Xue CL, Cheng BW, Han GQ, Yeo YC
Solid-State Electronics, 83, 66, 2013 |
| 9 |
Characteristics of Schottky barrier silicon nanocluster floating gate flash memory
Son D, Kim J, Lee K, Won S, Kim E, Kim TY, Jang M, Park K
Thin Solid Films, 519(18), 6174, 2011 |
| 10 |
Modeling the effects of the channel electron velocity on the channel surface potential of ballistic MOSFETs
Mao LF
Solid-State Electronics, 52(2), 186, 2008 |
