| 1 |
Analysis of the improvement of Al-Ta2O5/SiO2-Si structures reliability by Si substrate plasma nitridation in N2O
Novkovski N
Thin Solid Films, 517(15), 4394, 2009 |
| 2 |
Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide
Maiolo L, Pecora A, Cuscuna M, Fortunato G
Thin Solid Films, 515(19), 7590, 2007 |
| 3 |
The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors
Chang ACK, Ross IM, Norris DJ, Cullis AG, Tang YT, Cerrina C, Evans AGR
Thin Solid Films, 496(2), 306, 2006 |
| 4 |
Strontium hafnate films deposited by physical vapor deposition
McCarthy I, Agustin MP, Shamuilia S, Stemmer S, Afanas'ev VV, Campbell SA
Thin Solid Films, 515(4), 2527, 2006 |
| 5 |
Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates
Duenas S, Castan H, Garcia H, Barbolla J, Kukli K, Ritala M, Leskela M
Thin Solid Films, 474(1-2), 222, 2005 |
| 6 |
Effects of fluorine and chlorine on the gate oxide integrity of W/TiN/SiO2/Si metal-oxide-semiconductor structure
Park DG, Kim TK
Thin Solid Films, 483(1-2), 232, 2005 |
| 7 |
The impact of etch-stop layer for borderless contacts on deep submicron CMOS device performance - a comparative study
Liao H, Lee PS, Goh LNL, Liu H, Sudijono JL, Elgin Q, Sanford C
Thin Solid Films, 462-63, 29, 2004 |
| 8 |
Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition
Ohshita Y, Ogura A, Hoshino A, Hiiro S, Suzuki T, Machida H
Thin Solid Films, 406(1-2), 215, 2002 |
| 9 |
Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon
Kukli K, Ritala M, Uustare T, Aarik J, Forsgren K, Sajavaara T, Leskela M, Harsta A
Thin Solid Films, 410(1-2), 53, 2002 |
| 10 |
Hf1-xSixO2 deposition by metal organic chemical vapor deposition using the Hf(NEt2)(4)/SiH(NEt2)(3)/O-2 gas system
Ohshita Y, Ogura A, Ishikawa M, Hoshino A, Hiiro S, Suzuki T, Machida H
Thin Solid Films, 416(1-2), 208, 2002 |
