검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808 nm Bugge F, Netzel C, Weyers M Journal of Crystal Growth, 370, 221, 2013 |
| 2 |
1150-nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions Mereuta A, Iakovlev V, Caliman A, Mutter L, Sirbu A, Kapon E Journal of Crystal Growth, 310(23), 5178, 2008 |
| 3 |
Optimal operation of GaN thin film epitaxy employing control vector parametrization Varshney A, Armaou A AIChE Journal, 52(4), 1378, 2006 |
| 4 |
MOCVD growth of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications Lee JJ, Mawst LJ, Botez D Journal of Crystal Growth, 249(1-2), 100, 2003 |