검색결과 : 914건
| No. | Article |
|---|---|
| 1 |
Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys Ohkawa K, Ichinohe F, Watanabe T, Nakamura K, Iida D Journal of Crystal Growth, 512, 69, 2019 |
| 2 |
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Nagamatsu K, Ando Y, Kono T, Cheong H, Nitta S, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 512, 78, 2019 |
| 3 |
Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition Kwak T, Lee J, So B, Choi U, Nam O Journal of Crystal Growth, 510, 50, 2019 |
| 4 |
Heteroepitaxial growth of alpha-, beta-, gamma- and kappa-Ga2O3 phases by metalorganic vapor phase epitaxy Gottschalch V, Merker S, Blaurock S, Kneiss M, Teschner U, Grundmann M, Krautscheid H Journal of Crystal Growth, 510, 76, 2019 |
| 5 |
Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Liu ZB, Nitta S, Usami S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 509, 50, 2019 |
| 6 |
Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode Yoshimura S, Takano K, Ishida K, Shimomura K Journal of Crystal Growth, 509, 66, 2019 |
| 7 |
High throughput MOVPE and accelerated growth rate of GaAs for PV application Ubukata A, Sodabanlu H, Aihara T, Oshima R, Sugaya T, Koseki S, Matsumoto K, Watanabe K, Nakano Y, Sugiyama M Journal of Crystal Growth, 509, 87, 2019 |
| 8 |
Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool Tsukui M, Iyechika Y, Nago H, Takahashi H Journal of Crystal Growth, 509, 103, 2019 |
| 9 |
Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge Tajima J, Hikosaka T, Kuraguchi M, Nunoue S Journal of Crystal Growth, 509, 129, 2019 |
| 10 |
Morphological study of InGaN on GaN substrate by supersaturation Liu ZB, Nitta S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Amano H Journal of Crystal Growth, 508, 58, 2019 |