검색결과 : 56건
| No. | Article |
|---|---|
| 1 |
Parameters Affecting Heat Transfer During Condensation Inside Micropipes: Surface Tension Effect. Paper II Alshqirate AAS, Hammad MA, Tarawneh M Experimental Heat Transfer, 28(5), 405, 2015 |
| 2 |
The benefits and current progress of SiC SGTOs for pulsed power applications Ogunniyi A, O'Brien H, Lelis A, Scozzie C, Shaheen W, Agarwal A, Zhang J, Callanan R, Temple V Solid-State Electronics, 54(10), 1232, 2010 |
| 3 |
Crystal growth of micropipe free 4H-SiC on 4H-SiC{0 3 (3)over-bar 8} seed and high-purity semi-insulating 6H-SiC Shiomi H, Kinoshita H, Furusho T, Hayashi T, Tajima M, Higashi E Journal of Crystal Growth, 292(2), 188, 2006 |
| 4 |
Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Kusunoki K, Kamei K, Ueda Y, Naga S, Ito Y, Hasebe M, Ujihara T, Nakajima K Materials Science Forum, 483, 13, 2005 |
| 5 |
Evolution roots of growth-induced polytype domains in 6H-SiC single crystals Seo SH, Song JS, Oh RH, Wang YZ Materials Science Forum, 483, 43, 2005 |
| 6 |
2-inch 4H-SIC homoepitaxial layer grown on on-axis C-face substrate by CVD method Kojima K, Okumura H, Kuroda S, Arai D, Ohi A, Akinaga H Materials Science Forum, 483, 93, 2005 |
| 7 |
Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SiC Wagner A, Schulz D, Doerschel J Materials Science Forum, 483, 109, 2005 |
| 8 |
Homoepitaxial growth on 4H-SiC (03(3)over-bar-8) face by sublimation close space technique Yoneda S, Furusho T, Takagi H, Ohta S, Nishino S Materials Science Forum, 483, 129, 2005 |
| 9 |
Silicon carbide crystal and substrate technology: A survey of recent advances Hobgood HM, Brady MF, Calus MR, Jenny JR, Leonard RT, Malta DP, Muller SG, Powell AR, Tsvetkov VF, Glass RC, Carter CH Materials Science Forum, 457-460, 3, 2004 |
| 10 |
SiC crystal growth by HTCVD Ellison A, Magnusson B, Sundqvist B, Pozina G, Bergman JP, Janzen E, Vehanen A Materials Science Forum, 457-460, 9, 2004 |