화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process
Hirashita N, Nakaharai S, Moriyama Y, Usuda K, Tezuka T, Sugiyama N, Takagi SI
Thin Solid Films, 517(1), 407, 2008
2 A model for crack-induced nucleation of dislocations, complex stacking faults, and twins
Beltz GE, Chang M, Machova A
Materials Science Forum, 482, 17, 2005
3 Formation of microtwins in TmP/GaAs heterostructures
Lin CH, Hwu RJ, Sadwick LP
Journal of Crystal Growth, 247(1-2), 77, 2003
4 Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure
Zeng W
Journal of Crystal Growth, 220(4), 538, 2000