| 1 |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
Ha MTH, Huynh SH, Do HB, Lee CT, Luc QH, Chang EY
Thin Solid Films, 669, 430, 2019 |
| 2 |
Position dependant critical thickness in finite epitaxial systems
Kumar A, Subramaniam A
Applied Surface Science, 275, 60, 2013 |
| 3 |
Structural characterization of a Cu/MgO(001) interface using C-S-corrected HRTEM
Cazottes S, Zhang ZL, Daniel R, Chawla JS, Gall D, Dehm G
Thin Solid Films, 519(5), 1662, 2010 |
| 4 |
Characterization of Planar Defects in Annealed SiGe/Si Heterostructure
Lim YS, Seo WS
Korean Journal of Materials Research, 19(12), 699, 2009 |
| 5 |
Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping process
Ii S, Takaki Y, Ikeda K, Nakashima H, Nakashima H
Thin Solid Films, 517(1), 38, 2008 |
| 6 |
Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates
Onuma T, Nozaka T, Yamaguchi H, Suzuki T, Chichibu SF
Journal of Crystal Growth, 298, 193, 2007 |
| 7 |
Misfit dislocation network in Cu/Ni multilayers and its behaviors during scratching
Cheng D, Yan ZJ, Yan L
Thin Solid Films, 515(7-8), 3698, 2007 |
| 8 |
Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov L
Journal of Crystal Growth, 297(1), 57, 2006 |
| 9 |
Heavily doped silicon crystals: neckless growth and robust wafers
Hoshikawa K, Huang XM, Taishi T
Journal of Crystal Growth, 275(1-2), 276, 2005 |
| 10 |
Structural properties of directionally grown polycrystalline SiGe for solar cells
Fujiwara K, Pan W, Usami N, Sawada K, Nomura A, Ujihara T, Shishido T, Nakajima K
Journal of Crystal Growth, 275(3-4), 467, 2005 |
