| 1 |
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
Beckers A, Jazaeri F, Bohuslayskyi H, Hutin L, De Franceschi S, Enz C
Solid-State Electronics, 159, 106, 2019 |
| 2 |
The density-of-states contributions to the negative field charge drift mobility effect in poly(3-hexylthiophene) organic semiconductor
Jecl G, Cvikl B
Thin Solid Films, 646, 190, 2018 |
| 3 |
On the ionic strength dependence of the electrophoretic mobility: From 2D to 3D slope-plots
Cottet H, Wu HF, Allison SA
Electrophoresis, 38(5), 624, 2017 |
| 4 |
Can gel concentration gradients improve two- dimensional DNA displays?
Sean D, Wang YXE, Slater GW
Electrophoresis, 35(5), 736, 2014 |
| 5 |
An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
Roldan JB, Jimenez-Molinos F, Balaguer M, Gamiz F
Solid-State Electronics, 79, 92, 2013 |
| 6 |
Global conformations of proteins as predicted from the modeling of their CZE mobility data
Deiber JA, Piaggio MV, Peirotti MB
Electrophoresis, 32(20), 2779, 2011 |
| 7 |
Physical interpretation of the L-r parameter in the theory for the gel electrophoresis of partially denatured DNA
Sean D, Slater GW
Electrophoresis, 31(20), 3446, 2010 |
| 8 |
Two variable semi-empirical and artificial neural-network-based modeling of peptide mobilities in CZE: The effect of temperature and organic modifier concentration
Mittermayr S, Chovan T, Guttman A
Electrophoresis, 30(5), 890, 2009 |
| 9 |
Drain current model for nanoscale double-gate MOSFETs
Hariharan V, Thakker R, Singh K, Sachid AB, Patil MB, Vasi J, Rao VR
Solid-State Electronics, 53(9), 1001, 2009 |
| 10 |
Modeling and validation of piezoresistive coefficients in Si hole inversion layers
Pham AT, Jungemann C, Meinerzhagen B
Solid-State Electronics, 53(12), 1325, 2009 |
