| 1 |
Optical band gap, local work function and field emission properties of MBE grown beta-MoO3 nanoribbons
Maiti P, Guha P, Singh R, Dash JK, Satyam PV
Applied Surface Science, 476, 691, 2019 |
| 2 |
Step flow growth of Mn5Ge3 films on Ge(111) at room temperature
Petit M, Boussadi A, Heresanu V, Ranguis A, Michez L
Applied Surface Science, 480, 529, 2019 |
| 3 |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Lin KY, Wan HW, Chen KHM, Fanchiang YT, Chen WS, Lin YH, Cheng YT, Chen CC, Lin HY, Young LB, Cheng CP, Pi TW, Kwo J, Hong M
Journal of Crystal Growth, 512, 223, 2019 |
| 4 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy
Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI
Journal of Crystal Growth, 507, 357, 2019 |
| 5 |
Diameter controlled growth of SWCNTs using Ru as catalyst precursors coupled with atomic hydrogen treatment
Bouanis FZ, Florea I, Bouanis M, Muller D, Nyassi A, Le Normand F, Pribat D
Chemical Engineering Journal, 332, 92, 2018 |
| 6 |
Growth of large aspect ratio AuAg bimetallic nanowires on Si(110) substrate
Bhukta A, Guha P, Satpati B, Maiti P, Satyam PV
Applied Surface Science, 407, 337, 2017 |
| 7 |
Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Islam ME, Akabori M
Journal of Crystal Growth, 463, 86, 2017 |
| 8 |
Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study
Hong M, Wan HW, Chang P, Lin TD, Chang YH, Lee WC, Pi TW, Kwo J
Journal of Crystal Growth, 477, 159, 2017 |
| 9 |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 - In comparison with atomic layer deposited Al2O3
Wan HW, Lin KY, Cheng CK, Su YK, Lee WC, Hsu CH, Pi TW, Kwo J, Hong M
Journal of Crystal Growth, 477, 179, 2017 |
| 10 |
Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate
Satoh Y, Itoh Y, Kawashima T, Washio K
Thin Solid Films, 621, 42, 2017 |
