| 1 |
Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas
Habuka H, Tsuji M, Hirooka A
Journal of Crystal Growth, 401, 523, 2014 |
| 2 |
Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150 mm silicon substrate using monomethylsilane as precursor
Ajayakumar A, Maruthoor S, Fuchs T, Rohlfing F, Jakovlev O, Wilde J, Reinecke H
Thin Solid Films, 536, 94, 2013 |
| 3 |
Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
Bantaculo R, Saitoh E, Miyamoto Y, Handa H, Suemitsu M
Thin Solid Films, 520(2), 730, 2011 |
| 4 |
Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases
Habuka H, Watanabe M, Miura Y, Nishida M, Sekiguchi T
Journal of Crystal Growth, 300(2), 374, 2007 |
| 5 |
Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)-2 x 1 surface
Narita Y, Murata T, Kato A, Endoh T, Suemitsu M
Thin Solid Films, 508(1-2), 200, 2006 |
| 6 |
Adsorption kinetics of dimethylsilane at Si(001)
Senthil K, Nakazawa H, Suemitsu M
Applied Surface Science, 224(1-4), 183, 2004 |
| 7 |
Low temperature (320 degrees C) deposition of hydrogenated microcrystalline cubic silicon carbide thin films
Miyajima S, Yamada A, Konagai M
Materials Science Forum, 457-460, 317, 2004 |
| 8 |
Initial stage of 3C-SiC growth on Si(001)-2 x 1 surface using monomethylsilane
Narita Y, Inubushi T, Harashima M, Yasui K, Akahane T
Applied Surface Science, 216(1-4), 575, 2003 |
| 9 |
Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organo-silane buffer layer
Nakazawa H, Suemitsu M
Materials Science Forum, 389-3, 351, 2002 |
| 10 |
Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane
Yasui K, Asada K, Maeda T, Akahane T
Applied Surface Science, 175, 495, 2001 |
