검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells Kim B, Toprasertpong K, Paszuk A, Supplie O, Nakano Y, Hannappel T, Sugiyama M Solar Energy Materials and Solar Cells, 180, 303, 2018 |
| 2 |
X-ray diffraction simulation of GeSn/Ge multi-quantum wells with kinematic approach Li H, Chang C, Cheng HH Journal of Crystal Growth, 468, 272, 2017 |
| 3 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM Journal of Crystal Growth, 387, 16, 2014 |
| 4 |
Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate Wan Z, He Y, Choi C, Suh E, Yu YM, Yi SN, Ahn HS, Yang M, Lee HJ, Shin K Thin Solid Films, 546, 104, 2013 |
| 5 |
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices Longo M, Parisini A, Tarricone L, Vantaggio S, Bocchi C, Germini F, Lazzarini L Journal of Crystal Growth, 311(18), 4293, 2009 |
| 6 |
Ab initio calculation of optical absorption and reflectivity of Si(001)/SiO2 superlattices with varying interfaces Seino K, Wagner JM, Bechstedt F Applied Surface Science, 255(3), 787, 2008 |
| 7 |
Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells Arguirov T, Mchedlidze T, Akhmetov VD, Arguirova SK, Kittler M, Rolver R, Berghoff B, Forst M, Batzner DL, Spangenberg B Applied Surface Science, 254(4), 1083, 2007 |
| 8 |
Numerical analysis of an optoelectronic integrated device composed of coupled periodic MQW phototransistor and strained-QW laser diode Darabi E, Ahmadi V, Mirabbaszadeh K Solid-State Electronics, 50(3), 473, 2006 |
| 9 |
Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure Lin RM, Lin CH, Wang JC, Nee TE, Fang BR, Wang RY Journal of Crystal Growth, 278(1-4), 421, 2005 |
| 10 |
Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs Hsu YP, Chang SJ, Su YK, Sheu JK, Lee CT, Wen TC, Wu LW, Kuo CH, Chang CS, Shei SC Journal of Crystal Growth, 261(4), 466, 2004 |