검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Characteristics of post-nitridation rapid-thermal annealed gate oxide grown on 4H SiC Cheong KY, Bahng W, Kim NK Materials Science Forum, 483, 689, 2005 |
| 2 |
Characterization of non-equilibrium charge of MOS capacitors on p-type 4H SiC Cheong KY, Dimitrijev S, Han J Materials Science Forum, 457-460, 1365, 2004 |
| 3 |
Effects of initial nitridation on the characteristics of SiC-SiO2 interfaces Cheong KY, Dimitrijev S, Han J Materials Science Forum, 433-4, 583, 2002 |